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SIE836DF-T1-GE3

SIE836DF-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIE836DF-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 18.3A 10POLARPK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
647464 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2025
PDF
SIE836DF-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 100 V
FET Feature:-
Power Dissipation (Max):5.2W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:10-PolarPAK® (SH)
Package / Case:10-PolarPAK® (SH)
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