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BSS670S2LL6327HTSA1

BSS670S2LL6327HTSA1

MOSFET N-CH 55V 540MA SOT23-3

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BSS670S2LL6327HTSA1

BSS670S2LL6327HTSA1

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Part No :

BSS670S2LL6327HTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 540MA SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
487448 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
BSS670S2LL6327HTSA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:650mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id:2V @ 2.7µA
Gate Charge (Qg) (Max) @ Vgs:2.26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:75 pF @ 25 V
FET Feature:-
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
BSS670S2LL6327HTSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSS670S2LL6327HTSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSS670S2LL6327HTSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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