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FQB5N80TM

FQB5N80TM

MOSFET N-CH 800V 4.8A D2PAK

2-1825046-4

2-1825046-4

CONN IC DIP SOCKET 16POS GOLD

FQB5N80TM

FQB5N80TM

Image is for reference, please contact us to get the real picture

Part No :

FQB5N80TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 4.8A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
367336 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FQB5N80TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1250 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB5N80TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB5N80TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB5N80TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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