MOSFET N-CH 55V 135A TO262
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 135A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.7mOhm @ 104A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 230 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5110 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSS308PEL6327HTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 2A SOT23-3 |
|
NP55N055SDG-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 55A TO252 |
|
BSP296 E6433IR (Infineon Technologies) |
MOSFET N-CH 100V 1.1A SOT223-4 |
|
TSM120N10PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 100V 58A 8PDFN |
|
APT28F60BMicrosemi |
MOSFET N-CH 600V 30A TO247 |
|
SIB419DK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 9A PPAK SC75-6 |
|
IRLZ44ZSIR (Infineon Technologies) |
MOSFET N-CH 55V 51A D2PAK |
|
NVMS4816NR2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.8A 8SOIC |
|
FDH633605Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH DO-35 |
|
NTD3055-094GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A DPAK |
|
FQA12P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 12.6A TO3P |
|
IXFP5N50PMWickmann / Littelfuse |
MOSFET N-CH 500V 3.2A TO220AB |
|
BUK7614-55,118NXP Semiconductors |
MOSFET N-CH 55V 68A D2PAK |