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RFD12N06RLE

RFD12N06RLE

MOSFET N-CH 60V 18A IPAK

RFD12N06RLE

RFD12N06RLE

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Part No :

RFD12N06RLE

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 18A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
547054 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
RFD12N06RLE PDF
Type Description
Series:UltraFET™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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