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2N6796

2N6796

MOSFET N-CH 100V 8A TO39

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2N6796

2N6796

Image is for reference, please contact us to get the real picture

Part No :

2N6796

Manufacturer
Microsemi
Description
MOSFET N-CH 100V 8A TO39
Catalog
Transistors - FETs, MOSFETs - Single
Availability
347034 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 21 - Feb 25 2025
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs:6.34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):800mW (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AF Metal Can
2N6796 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N6796 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N6796 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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