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RP1E090XNTCR

RP1E090XNTCR

Image is for reference, please contact us to get the real picture

Part No :

RP1E090XNTCR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 9A MPT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
207020 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 03 - Nov 07 2025
PDF
RP1E090XNTCR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MPT6
Package / Case:6-SMD, Flat Leads
RP1E090XNTCR is available at GangBo-ic.com, Please review product page below for detailed information, including RP1E090XNTCR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RP1E090XNTCR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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