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SI1489EDH-T1-GE3

SI1489EDH-T1-GE3

MOSFET P-CH 8V 2A SOT-363

SI1489EDH-T1-GE3

SI1489EDH-T1-GE3

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Part No :

SI1489EDH-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 8V 2A SOT-363
Catalog
Transistors - FETs, MOSFETs - Single
Availability
516951 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 06 - Mar 10 2025
PDF
SI1489EDH-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:48mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):2.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-363
Package / Case:6-TSSOP, SC-88, SOT-363
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