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IPB12CN10N G

IPB12CN10N G

MOSFET N-CH 100V 67A D2PAK

IPB12CN10N G

IPB12CN10N G

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Part No :

IPB12CN10N G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 67A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
816881 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 05 - Mar 09 2025
PDF
IPB12CN10N G PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.6mOhm @ 67A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4320 pF @ 50 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB12CN10N G is available at GangBo-ic.com, Please review product page below for detailed information, including IPB12CN10N G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB12CN10N G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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