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FQD10N20CTM_F080

FQD10N20CTM_F080

MOSFET N-CH 200V 7.8A DPAK

FQD10N20CTM_F080

FQD10N20CTM_F080

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Part No :

FQD10N20CTM_F080

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 7.8A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
606860 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 05 - Mar 09 2025
PDF
FQD10N20CTM_F080 PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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