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SPB21N10

SPB21N10

MOSFET N-CH 100V 21A TO263-3

SPB21N10

SPB21N10

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Part No :

SPB21N10

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 21A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
426742 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 02 - Mar 06 2025
PDF
SPB21N10 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs:38.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:865 pF @ 25 V
FET Feature:-
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB21N10 is available at GangBo-ic.com, Please review product page below for detailed information, including SPB21N10 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPB21N10 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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