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SI4102DY-T1-E3

SI4102DY-T1-E3

MOSFET N-CH 100V 3.8A 8SO

SI4102DY-T1-E3

SI4102DY-T1-E3

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Part No :

SI4102DY-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 3.8A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
106610 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
SI4102DY-T1-E3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:158mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:370 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta), 4.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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