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IRFS4710PBF

IRFS4710PBF

MOSFET N-CH 100V 75A D2PAK

Y0015405R840B9L

Y0015405R840B9L

RES 405.84 OHM 1/4W 0.1% AXIAL

KNP3WSJT-52-13R

KNP3WSJT-52-13R

RES WW 3W 5% AXIAL

IRFS4710PBF

IRFS4710PBF

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Part No :

IRFS4710PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 75A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
476547 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
IRFS4710PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6160 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4710PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFS4710PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFS4710PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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