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FQP1N60

FQP1N60

MOSFET N-CH 600V 1.2A TO220-3

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FQP1N60

FQP1N60

Image is for reference, please contact us to get the real picture

Part No :

FQP1N60

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 1.2A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
066506 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
FQP1N60 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.5Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP1N60 is available at GangBo-ic.com, Please review product page below for detailed information, including FQP1N60 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP1N60 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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