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RQJ0303PGDQA#H6

RQJ0303PGDQA#H6

MOSFET P-CH 30V 3.3A 3MPAK

RQJ0303PGDQA#H6

RQJ0303PGDQA#H6

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Part No :

RQJ0303PGDQA#H6

Manufacturer
Renesas Electronics America
Description
MOSFET P-CH 30V 3.3A 3MPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
536453 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
RQJ0303PGDQA#H6 PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:68mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:625 pF @ 10 V
FET Feature:-
Power Dissipation (Max):800mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-MPAK
Package / Case:TO-236-3, SC-59, SOT-23-3
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