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BSP317PE6327T

BSP317PE6327T

MOSFET P-CH 250V 430MA SOT223-4

MKP385251100JCA2B0

MKP385251100JCA2B0

CAP FILM 5100PF 5% 1KVDC RADIAL

BSP317PE6327T

BSP317PE6327T

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Part No :

BSP317PE6327T

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 250V 430MA SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
856285 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
BSP317PE6327T PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4Ohm @ 430mA, 10V
Vgs(th) (Max) @ Id:2V @ 370µA
Gate Charge (Qg) (Max) @ Vgs:15.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:262 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
BSP317PE6327T is available at GangBo-ic.com, Please review product page below for detailed information, including BSP317PE6327T price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSP317PE6327T to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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