MOSFET P-CH 30V 11A 8SO
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13.5mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4030 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB80N06S2L05ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
FQP1P50Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 1.5A TO220-3 |
|
IRL3103D1IR (Infineon Technologies) |
MOSFET N-CH 30V 64A TO220AB |
|
IPP037N08N3GE8181XKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TO220-3 |
|
IRF540ZLIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO262 |
|
IRL2203NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 116A D2PAK |
|
STP180N55F3STMicroelectronics |
MOSFET N-CH 55V 120A TO220AB |
|
PHP78NQ03LT,127NXP Semiconductors |
MOSFET N-CH 25V 75A TO220AB |
|
TSM10N06CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 10A TO252 |
|
STD7NK30ZSTMicroelectronics |
MOSFET N-CH 300V 5A DPAK |
|
IRLW510ATMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.6A I2PAK |
|
2SJ438(AISIN,A,Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH TO220NIS |
|
STB300NH02LSTMicroelectronics |
MOSFET N-CH 24V 120A D2PAK |