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IRFSL11N50A

IRFSL11N50A

MOSFET N-CH 500V 11A TO262-3

IRFSL11N50A

IRFSL11N50A

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Part No :

IRFSL11N50A

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 500V 11A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
165816 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IRFSL11N50A PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1426 pF @ 25 V
FET Feature:-
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRFSL11N50A is available at GangBo-ic.com, Please review product page below for detailed information, including IRFSL11N50A price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFSL11N50A to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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