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IPD650P06NMSAUMA1

IPD650P06NMSAUMA1

MOSFET P-CH 60V 22A TO252-3

MS27656T13F98PA-LC

MS27656T13F98PA-LC

CONN RCPT HSNG MALE 10POS PNL MT

IPD650P06NMSAUMA1

IPD650P06NMSAUMA1

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Part No :

IPD650P06NMSAUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 22A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
745774 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 30 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD650P06NMSAUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD650P06NMSAUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD650P06NMSAUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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