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IPB160N08S403ATMA1

IPB160N08S403ATMA1

MOSFET N-CH 80V 160A TO263-7

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IPB160N08S403ATMA1

IPB160N08S403ATMA1

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Part No :

IPB160N08S403ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 160A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
585758 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPB160N08S403ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:112 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7750 pF @ 25 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
IPB160N08S403ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB160N08S403ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB160N08S403ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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