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416F32022ILT

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IPI06CN10N G

IPI06CN10N G

MOSFET N-CH 100V 100A TO262-3

IPI06CN10N G

IPI06CN10N G

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Part No :

IPI06CN10N G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 100A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
155715 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPI06CN10N G PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:139 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9200 pF @ 50 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI06CN10N G is available at GangBo-ic.com, Please review product page below for detailed information, including IPI06CN10N G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI06CN10N G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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