CAP CER 0.47UF 100V X8R 1210
MOSFET N-CH 1200V 12A PLUS220
Type | Description |
---|---|
Series: | HiPerFET™, PolarP2™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.35Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 103 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 5400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 543W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS220 |
Package / Case: | TO-220-3, Short Tab |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXFE180N10Wickmann / Littelfuse |
MOSFET N-CH 100V 176A SOT227B |
|
IXFR12N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 10A ISOPLUS247 |
|
AUXAKF1405ZS-7PIR (Infineon Technologies) |
MOSFET N-CH 55V 120A D2PAK |
|
IPB90N06S404ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO263-3 |
|
IRLZ34NSIR (Infineon Technologies) |
MOSFET N-CH 55V 30A D2PAK |
|
AOTF4T60PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220-3F |
|
AOD4124Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 7.5A/54A TO252 |
|
TPCC8A01-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 21A 8TSON |
|
IRL530NLIR (Infineon Technologies) |
MOSFET N-CH 100V 17A TO262 |
|
PH3030AL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
BS170RLRAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA TO92-3 |
|
HAT2171H-EL-ERenesas Electronics America |
MOSFET N-CH 40V 40A LFPAK |
|
IRLZ44LVishay / Siliconix |
MOSFET N-CH 60V 50A TO262-3 |