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BSP300H6327XUSA1

BSP300H6327XUSA1

MOSFET N-CH 800V 190MA SOT223-4

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BSP300H6327XUSA1

BSP300H6327XUSA1

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Part No :

BSP300H6327XUSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 190MA SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
415541 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
BSP300H6327XUSA1 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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