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SPI07N65C3HKSA1

SPI07N65C3HKSA1

MOSFET N-CH 650V 7.3A TO262-3

SPI07N65C3HKSA1

SPI07N65C3HKSA1

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Part No :

SPI07N65C3HKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 7.3A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
435443 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
SPI07N65C3HKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 25 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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