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SI5463EDC-T1-E3

SI5463EDC-T1-E3

MOSFET P-CH 20V 3.8A 1206-8

SI5463EDC-T1-E3

SI5463EDC-T1-E3

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Part No :

SI5463EDC-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 3.8A 1206-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
675367 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2024
PDF
SI5463EDC-T1-E3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:62mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:1206-8 ChipFET™
Package / Case:8-SMD, Flat Lead
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