MOSFET N CH 650V 11A I2PAKFP
Type | Description |
---|---|
Series: | MDmesh™ II |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 455mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 800 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAKFP (TO-281) |
Package / Case: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRFR020TRLVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
![]() |
MTB75N05HDT4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 75A D2PAK |
![]() |
IRLI520NIR (Infineon Technologies) |
MOSFET N-CH 100V 8.1A TO220AB FP |
![]() |
IPD60R600P6IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO252-3 |
![]() |
IXFN36N110PWickmann / Littelfuse |
MOSFET N-CH 1100V 36A SOT-227B |
![]() |
IRF2807ZIR (Infineon Technologies) |
MOSFET N-CH 75V 75A TO220AB |
![]() |
IXTA160N075TWickmann / Littelfuse |
MOSFET N-CH 75V 160A TO263 |
![]() |
STN5PF02VSTMicroelectronics |
MOSFET P-CH 20V 4.2A SOT223 |
![]() |
IRFH4213DTRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 40A PQFN |
![]() |
NP52N055SUG-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 52A TO252 |
![]() |
AO5401EAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 500MA SC89-3 |
![]() |
AOI516_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A/46A TO251B |
![]() |
NTMFS4826NET1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.5A/66A 5DFN |