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IPI50CN10NGHKSA1

IPI50CN10NGHKSA1

MOSFET N-CH 100V 20A TO262-3

IPI50CN10NGHKSA1

IPI50CN10NGHKSA1

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Part No :

IPI50CN10NGHKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 20A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
694969 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
IPI50CN10NGHKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1090 pF @ 50 V
FET Feature:-
Power Dissipation (Max):44W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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