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FQAF7N80

FQAF7N80

MOSFET N-CH 800V 5A TO3PF

FQAF7N80

FQAF7N80

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Part No :

FQAF7N80

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 5A TO3PF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
664866 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
FQAF7N80 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 25 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
FQAF7N80 is available at GangBo-ic.com, Please review product page below for detailed information, including FQAF7N80 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQAF7N80 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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