HEATSINK 35X35X10MM R-TAB
MOSFET N-CH 100V 100A TO264
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 11mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 378 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10640 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264 |
Package / Case: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IPS06N03LZ GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO251-3 |
![]() |
NTP75N03-6GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 75A TO220AB |
![]() |
AON6590_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 67A/100A 8DFN |
![]() |
STW12NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A TO247-3 |
![]() |
IPS04N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
![]() |
STL23NS3LLH7STMicroelectronics |
MOSFET N-CH 30V 92A POWERFLAT |
![]() |
STD60NF3LLT4STMicroelectronics |
MOSFET N-CH 30V 60A DPAK |
![]() |
FDR858PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 8A SUPERSOT8 |
![]() |
DMP3100L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 2.7A SOT23-3 |
![]() |
IPP10N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO220-3 |
![]() |
SN7002NL6433HTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 200MA SOT23-3 |
![]() |
STB60NH02LT4STMicroelectronics |
MOSFET N-CH 24V 60A D2PAK |
![]() |
2N7000-APMicro Commercial Components (MCC) |
MOSFET N-CH 60V 200MA TO92 |