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MVB50P03HDLT4G

MVB50P03HDLT4G

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Part No :

MVB50P03HDLT4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 30V 50A D2PAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
934593 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 20 - Apr 24 2025
PDF
MVB50P03HDLT4G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:25mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:4.9 nF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MVB50P03HDLT4G is available at GangBo-ic.com, Please review product page below for detailed information, including MVB50P03HDLT4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MVB50P03HDLT4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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