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IPB11N03LA

IPB11N03LA

MOSFET N-CH 25V 30A TO263-3

IPB11N03LA

IPB11N03LA

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Part No :

IPB11N03LA

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 30A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
974397 pieces
Shipped from
HK warehouse
Expected Shipping Date
Aug 24 - Aug 28 2025
PDF
IPB11N03LA PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1358 pF @ 15 V
FET Feature:-
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB11N03LA is available at GangBo-ic.com, Please review product page below for detailed information, including IPB11N03LA price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB11N03LA to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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