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NTD4960N-1G

NTD4960N-1G

Image is for reference, please contact us to get the real picture

Part No :

NTD4960N-1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 30V 8.9A/55A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
214321 pieces
Shipped from
HK warehouse
Expected Shipping Date
Aug 23 - Aug 27 2025
PDF
NTD4960N-1G PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.9A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.07W (Ta), 35.71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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