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IRF6785MTR1PBF

IRF6785MTR1PBF

Image is for reference, please contact us to get the real picture

Part No :

IRF6785MTR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 3.4A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
414141 pieces
Shipped from
HK warehouse
Expected Shipping Date
Aug 16 - Aug 20 2025
PDF
IRF6785MTR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 57W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MZ
Package / Case:DirectFET™ Isometric MZ
IRF6785MTR1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6785MTR1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6785MTR1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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