MOSFET N-CH 30V 9.8A 8SO
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 9.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13mOhm @ 9.8A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 43 nC @ 10 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1849 pF @ 15 V |
FET Feature: | Schottky Diode (Body) |
Power Dissipation (Max): | 1.54W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFL024ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 5.1A SOT223 |
|
SPB35N10 GIR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO263-3 |
|
FDS6690A_NBBM015ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A 8SOIC |
|
2SK4209Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 12A TO3PB |
|
2SK4093TZ-ERenesas Electronics America |
MOSFET N-CH 250V 1A TO92MOD |
|
STD70N2LH5STMicroelectronics |
MOSFET N-CH 25V 48A DPAK |
|
STW16NM50NSTMicroelectronics |
MOSFET N-CH 500V 15A TO247-3 |
|
IRF840STRLVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
SI7476DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 15A PPAK SO-8 |
|
2SK1341-ERenesas Electronics America |
MOSFET N-CH 900V 6A TO3P |
|
94-3412PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8SO |
|
IPI80N06S405AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO262-3 |
|
AON6370Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 23A/47A 8DFN |