MOSFET P-CH 20V 4A MICRO6
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 86mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.4 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 594 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Micro6™(TSOP-6) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXTP44N30TWickmann / Littelfuse |
MOSFET N-CH 300V 44A TO220AB |
|
FDMC612PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 14A 8MLP |
|
HUF75345S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK |
|
IPDH5N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO252-3 |
|
SI7452DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 11.5A PPAK SO-8 |
|
IRLU3715IR (Infineon Technologies) |
MOSFET N-CH 20V 54A I-PAK |
|
SI1411DH-T1-E3Vishay / Siliconix |
MOSFET P-CH 150V 420MA SC70-6 |
|
ZXM64P035L3Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 35V 3.3A/12A TO220-3 |
|
IXFH80N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 80A TO-247 |
|
SPD35N10IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO252-3 |
|
IRF7726TRIR (Infineon Technologies) |
MOSFET P-CH 30V 7A MICRO8 |
|
STU11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A IPAK |
|
IPB26CNE8N GIR (Infineon Technologies) |
MOSFET N-CH 85V 35A D2PAK |