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IRF5806TRPBF

IRF5806TRPBF

MOSFET P-CH 20V 4A MICRO6

IRF5806TRPBF

IRF5806TRPBF

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Part No :

IRF5806TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 20V 4A MICRO6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
823682 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
IRF5806TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:86mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.4 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:594 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(TSOP-6)
Package / Case:SOT-23-6 Thin, TSOT-23-6
IRF5806TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF5806TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF5806TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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