RES 768 OHM 1% 1/4W 0805
MOSFET N-CH 100V 4.6A 8SO
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 105mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 446 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR9020TRVishay / Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
|
IPD90N06S405ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
IRL3714STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A D2PAK |
|
NTD5406NGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 12.2A/70A DPAK |
|
RJK6014DPK-00#T0Renesas Electronics America |
MOSFET N-CH 600V 16A TO3P |
|
GA100JT17-227GeneSiC Semiconductor |
TRANS SJT 1700V 160A SOT227 |
|
NTD4302T4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.4A/68A DPAK |
|
ZVP4525E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 250V 197MA SOT23-6 |
|
IRFR1010ZIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
BUK9Y30-75B/C2,115Nexperia |
MOSFET N-CH 75V 34A LFPAK56 |
|
FQPF1N60TSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 900MA TO220F |
|
SSM3K302T(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 3A TSM |
|
IPI16CNE8N GIR (Infineon Technologies) |
MOSFET N-CH 85V 53A TO262-3 |