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FQD4N25TF

FQD4N25TF

MOSFET N-CH 250V 3A DPAK

FQD4N25TF

FQD4N25TF

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Part No :

FQD4N25TF

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 250V 3A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
253425 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
FQD4N25TF PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N25TF is available at GangBo-ic.com, Please review product page below for detailed information, including FQD4N25TF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD4N25TF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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