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IRF6668TR1PBF

IRF6668TR1PBF

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Part No :

IRF6668TR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 55A DIRECTFET MZ
Catalog
Transistors - FETs, MOSFETs - Single
Availability
783378 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
IRF6668TR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MZ
Package / Case:DirectFET™ Isometric MZ
IRF6668TR1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6668TR1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6668TR1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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