CAP CER 22PF 63V C0G/NP0 1210
MOSFET N-CH 400V 9.5A TO220F
Type | Description |
---|---|
Series: | QFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400 V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 270mOhm @ 4.75A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2300 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 56W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IXFH14N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 14A TO247AD |
![]() |
IRF7468IR (Infineon Technologies) |
MOSFET N-CH 40V 9.4A 8SO |
![]() |
TK20A25D,S5Q(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 20A TO220SIS |
![]() |
FQD7P20TM_F080Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 5.7A DPAK |
![]() |
SIA425EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4.5A PPAK SC70-6 |
![]() |
IRF820ASTRLVishay / Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
![]() |
HAT2192WP-EL-ERenesas Electronics America |
MOSFET N-CH 250V 10A 8WPAK |
![]() |
STF25N10F7STMicroelectronics |
MOSFET N-CH 100V 19A TO220FP |
![]() |
FDM6296Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.5A 8POWER33 |
![]() |
IRF540N_R4942Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 33A TO220-3 |
![]() |
SUD50P04-13L-GE3Vishay / Siliconix |
MOSFET P-CH 40V 60A TO252 |
![]() |
IXFT30N50QWickmann / Littelfuse |
MOSFET N-CH 500V 30A TO268 |
![]() |
IRFI9610GVishay / Siliconix |
MOSFET P-CH 200V 2A TO220-3 |