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IRFR13N20DTRPBF

IRFR13N20DTRPBF

MOSFET N-CH 200V 13A DPAK

IRFR13N20DTRPBF

IRFR13N20DTRPBF

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Part No :

IRFR13N20DTRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 13A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
043004 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 21 - Nov 25 2024
PDF
IRFR13N20DTRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:235mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:830 pF @ 25 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR13N20DTRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFR13N20DTRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFR13N20DTRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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