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IPS12CN10LGBKMA1

IPS12CN10LGBKMA1

MOSFET N-CH 100V 69A TO251-3

IPS12CN10LGBKMA1

IPS12CN10LGBKMA1

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Part No :

IPS12CN10LGBKMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 69A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
702970 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 20 - Nov 24 2024
PDF
IPS12CN10LGBKMA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.8mOhm @ 69A, 10V
Vgs(th) (Max) @ Id:2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 50 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
IPS12CN10LGBKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPS12CN10LGBKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPS12CN10LGBKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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