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IPB03N03LA

IPB03N03LA

MOSFET N-CH 25V 80A TO263-3

IPB03N03LA

IPB03N03LA

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Part No :

IPB03N03LA

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
802680 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
IPB03N03LA PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7027 pF @ 15 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB03N03LA is available at GangBo-ic.com, Please review product page below for detailed information, including IPB03N03LA price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB03N03LA to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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