MOSFET N-CH 30V 32A DIRECTFET
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta), 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.6mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 56 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4860 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 3.9W (Ta), 89W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DIRECTFET™ MX |
Package / Case: | DirectFET™ Isometric MX |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
AOD403_030Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A/70A TO252 |
![]() |
STP11NM60FPSTMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
![]() |
FDD8870-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A TO252AA |
![]() |
SPI07N60C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO262-3 |
![]() |
IPI04CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO262-3 |
![]() |
AO6405_101Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 5A 6TSOP |
![]() |
AO4476AL_102Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A 8SO |
![]() |
IRFZ44NLIR (Infineon Technologies) |
MOSFET N-CH 55V 49A TO262 |
![]() |
ZVN4210GTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 800MA SOT223 |
![]() |
IRFI4510GPBFIR (Infineon Technologies) |
MOSFET N CH 100V 35A TO220 |
![]() |
IRFR9014TRRVishay / Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
![]() |
SI7802DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 250V 1.24A PPAK |
![]() |
IPB77N06S212ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 77A TO263-3 |