DIODE GEN PURP 400V 4A DO201AD
WIDE BAND LOW POWER AMPLIFIER
MOSFET N-CH 250V 2.2A 8SO
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250 V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 230mOhm @ 1.3A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 930 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRF3711STRRIR (Infineon Technologies) |
MOSFET N-CH 20V 110A D2PAK |
![]() |
IRL2203NSTRRIR (Infineon Technologies) |
MOSFET N-CH 30V 116A D2PAK |
![]() |
BSP125 E6327IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
![]() |
IXFN60N60Wickmann / Littelfuse |
MOSFET N-CH 600V 60A SOT-227B |
![]() |
SUM23N15-73-E3Vishay / Siliconix |
MOSFET N-CH 150V 23A TO263 |
![]() |
FQAF47P06Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 38A TO3PF |
![]() |
IRF3314STRRIR (Infineon Technologies) |
MOSFET N-CH 150V D2PAK |
![]() |
AOWF240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 21A/83A |
![]() |
AUIRF7484QIR (Infineon Technologies) |
MOSFET N CH 40V 14A 8-SO |
![]() |
IRF7220TRPBFIR (Infineon Technologies) |
MOSFET P-CH 14V 11A 8SO |
![]() |
NTGS4111PT2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.6A 6TSOP |
![]() |
IRF2807ZSIR (Infineon Technologies) |
MOSFET N-CH 75V 75A D2PAK |
![]() |
STD90NS3LLH7STMicroelectronics |
MOSFET N-CHANNEL 30V 80A DPAK |