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GA04JT17-247

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GA04JT17-247

GA04JT17-247

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Part No :

GA04JT17-247

Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1700V 4A TO247AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
052305 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
GA04JT17-247 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:480mOhm @ 4A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):106W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AB
Package / Case:TO-247-3
GA04JT17-247 is available at GangBo-ic.com, Please review product page below for detailed information, including GA04JT17-247 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for GA04JT17-247 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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