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IRF1902GTRPBF

IRF1902GTRPBF

MOSFET N-CH 20V 4.2A 8SO

M39014/02-1223

M39014/02-1223

CAP CER RADIAL

IRF1902GTRPBF

IRF1902GTRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRF1902GTRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 4.2A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
592259 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 15 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
IRF1902GTRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1902GTRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1902GTRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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