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IPB80N06S2L09ATMA1

IPB80N06S2L09ATMA1

MOSFET N-CH 55V 80A TO263-3

RP109L091B-TR

RP109L091B-TR

IC REG LIN 0.9V 150MA DFN1010-4

IPB80N06S2L09ATMA1

IPB80N06S2L09ATMA1

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Part No :

IPB80N06S2L09ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
302230 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPB80N06S2L09ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.2mOhm @ 52A, 10V
Vgs(th) (Max) @ Id:2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2620 pF @ 25 V
FET Feature:-
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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