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FQB10N60CTM

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FQB10N60CTM

FQB10N60CTM

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Part No :

FQB10N60CTM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 9.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
961996 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
FQB10N60CTM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2040 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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