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MOSFET P-CH 20V 6.9A 8SOIC

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NTMS4101PR2

NTMS4101PR2

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Part No :

NTMS4101PR2

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 6.9A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
661966 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
NTMS4101PR2 PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:19mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id:450mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.38W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
NTMS4101PR2 is available at GangBo-ic.com, Please review product page below for detailed information, including NTMS4101PR2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMS4101PR2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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