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IPU80R1K4CEAKMA1

IPU80R1K4CEAKMA1

MOSFET N-CH 800V 3.9A TO251-3

S2015L

S2015L

SCR 200V 15A TO220

IPU80R1K4CEAKMA1

IPU80R1K4CEAKMA1

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Part No :

IPU80R1K4CEAKMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 3.9A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
051905 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2024
PDF
IPU80R1K4CEAKMA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 100 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IPU80R1K4CEAKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPU80R1K4CEAKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPU80R1K4CEAKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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